Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Combined assessment of piezoelectric AlN films using X-ray diffraction, infrared absorption and atomic force microscopy
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
In this work we present the comparative study of sputtered AlN films by X-ray diffraction (XRD), infrared absorption in the reflectance mode (R-IR), atomic force microscopy (AFM) and the measurement of their piezoelectric response. The aim of this comparison is to achieve a good understanding of the information provided by each technique to relate it with the piezoelectric behaviour of the films. A large set of AlN films with different characteristics has been evaluated. We have observed that films with perfect c-axis orientation, as measured by XRD, exhibit an excellent piezoelectric response. The presence of traces of non-0002 reflections in the XRD patterns of some films, indicative of the existence of tilted grains, is related to a significant reduction in their piezoelectric response. In such cases, R-IR and AFM measurements are significantly more sensitive for the detection of tilted grains than conventional XRD measurements.
International
Si
JCR
Si
Title
DIAM RELAT MATER
ISBN
0925-9635
Impact factor JCR
1,788
Impact info
Volume
Journal number
16
From page
1421
To page
1424
Month
SIN MES
Ranking
Participants
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Alfredo Sanz Hervas (UPM)
  • Autor: Sheila González Castilla (UPM)
  • Autor: Lucía Vergara Herrero (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Tecnología Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
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