Memorias de investigación
Conferencias:
Study of a-Si crystallization dependence on power and irradiation time using a CW green laser
Año:2014
Áreas de investigación
  • Ingenierías,
  • Ingeniería mecánica, aeronaútica y naval,
  • Ingeniería eléctrica, electrónica y automática
Datos
Descripción
An advantage of laser crystallization over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the a-Si thin film to change the microstructure to poly-Si. Thin film samples of a-Si were irradiated with a CW-green laser source. Laser irradiated spots were produced by using different laser powers and irradiation times. These parameters are identified as key variables in the crystallization process. The power threshold for crystallization is reduced as the irradiation time is increased. When this threshold is reached the crystalline fraction increases lineally with power for each irradiation time. The experimental results are analysed with the aid of a numerical thermal model and the presence of two crystallization mechanisms are observed: one due to melting and the other due to solid phase transformation.
Internacional
Si
ISSN o ISBN
9780819498816
Entidad relacionada
SPIE
Nacionalidad Entidad
E.E.U.U. DE AMERICA
Lugar del congreso
San Francisco EE.UU.
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Investigación en Ingeniería y Aplicaciones del Láser
  • Centro o Instituto I+D+i: Centro Laser
  • Departamento: Física Aplicada e Ingeniería de Materiales