Observatorio de I+D+i UPM

Memorias de investigación
Study of a-Si crystallization dependence on power and irradiation time using a CW green laser
Research Areas
  • Engineering,
  • Mechanical aeronautics and naval engineering,
  • Electric engineers, electronic and automatic (eil)
An advantage of laser crystallization over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the a-Si thin film to change the microstructure to poly-Si. Thin film samples of a-Si were irradiated with a CW-green laser source. Laser irradiated spots were produced by using different laser powers and irradiation times. These parameters are identified as key variables in the crystallization process. The power threshold for crystallization is reduced as the irradiation time is increased. When this threshold is reached the crystalline fraction increases lineally with power for each irradiation time. The experimental results are analysed with the aid of a numerical thermal model and the presence of two crystallization mechanisms are observed: one due to melting and the other due to solid phase transformation.
Entity Nationality
San Francisco EE.UU.
  • Autor: Miguel Morales Furio (UPM)
  • Autor: David Muñoz Martin (UPM)
  • Autor: Yu Chen (UPM)
  • Autor: Oscar Garcia Garcia (UPM)
  • Autor: Juan José García-Ballesteros . (UPM)
  • Autor: Julio Cárabe (CIEMAT)
  • Autor: JJ Gandía (CIEMAT)
  • Autor: Carlos Luis Molpeceres Alvarez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Investigación en Ingeniería y Aplicaciones del Láser
  • Centro o Instituto I+D+i: Centro Laser
  • Departamento: Física Aplicada e Ingeniería de Materiales
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)