Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
Year:2014
Research Areas
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Solar cells
Information
Abstract
The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas.
International
Si
Congress
International Workshop on Nitrides 2014
970
Place
Wroclaw, Polonia
Reviewers
Si
ISBN/ISSN
00000000
Start Date
24/08/2014
End Date
29/08/2014
From page
0
To page
3
Proceedings
Participants
  • Autor: Victor Jesus Gomez Hernandez (UPM)
  • Autor: Zarko Gacevic (UPM)
  • Autor: Pavel Aseev (UPM)
  • Autor: Paul Soto Rodriguez (UPM)
  • Autor: Praveen Kumar . (UPM)
  • Autor: Enrique Calleja Pardo (UPM)
  • Autor: Richard Notzel . (UPM)
  • Autor: Miguel Angel Sanchez Garcia (UPM)
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)