|
Descripción
|
|
|---|---|
| Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency. | |
|
Internacional
|
Si |
|
JCR del ISI
|
No |
|
Título de la revista
|
Proc. of SPIE Vol. 9134, Semiconductor Lasers and Laser Dynamics VI |
|
ISSN
|
0277-786X |
|
Factor de impacto JCR
|
|
|
Información de impacto
|
|
|
Volumen
|
9134 |
|
DOI
|
10.1117/12.2052488 |
|
Número de revista
|
|
|
Desde la página
|
91342A-1 |
|
Hasta la página
|
91342A-7 |
|
Mes
|
SIN MES |
|
Ranking
|
|