Descripción
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The measurement of the external quantum efficiency (EQE) of low bandgap subcells in a multijunction solar cell can be sometimes problematic. In particular, this paper describes a set of cases where the EQE of a Ge subcell in a conventional GaInP/GaInAs/Ge triple-junction solar cell cannot be fully measured. We describe the way to identify each case by tracing the I-V curve under the same light-bias conditions applied for the EQE measurement, together with the strategies that could be implemented to attain the best possible measurement of the EQE of the Ge subcell. | |
Internacional
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Si |
JCR del ISI
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No |
Título de la revista
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AIP Conference Proceedings |
ISSN
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0094-243X |
Factor de impacto JCR
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Información de impacto
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Volumen
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1679 |
DOI
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10.1063/1.4931510 |
Número de revista
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Desde la página
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030006-1 |
Hasta la página
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030006-6 |
Mes
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SIN MES |
Ranking
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