Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Alternatives for rear-surface passivation in III-V on Si multi-junction solar cells
Year:2015
Research Areas
  • Electronic devices,
  • Solar cells
Information
Abstract
In the recent developments in the field of III-V on Si dual-junction solar cells, low attention has been paid to optimizing the device configuration to maximize its photovoltaic performance. The few practical implementations reported heretofore have been based on III-V solar cell processing techniques. Although the fabrication of conventional Si structures is a well-known technology, certain steps have been found to be incompatible with III-V semiconductors, primarily due to their high thermal load. Accordingly, in this work we discuss the applicability of different alternatives for the Si rear-surface passivation (Al-BSF, PERC- and HIT-like schemes) in III-V/Si dual-junction solar cell structures. Using numerical simulations, a comparison of the Si bottom cell performance in a GaAsP/Si dual-junction solar cell structure is presented for the mentioned alternatives.
International
Si
Congress
42nd IEEE Photovoltaic Specialist Conference,
960
Place
New Orleans; EEUU
Reviewers
Si
ISBN/ISSN
978-1-4799-7944-8
10.1109/pvsc.2015.7356235
Start Date
14/06/2015
End Date
19/06/2015
From page
1
To page
4
Proc. PVSC 2015
Participants
  • Autor: Diego Martín Martín (UPM)
  • Autor: Elisa Garcia-Tabares Valdivieso (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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