Descripción
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We present recent improvements to the 4-junction inverted metamorphic solar cell. The device now includes a (Ga)InAsP buffer that transitions to lattice constants greater than InP, which allows access to GaInAs subcells with bandgaps < 0.74 eV and an additional 2 mA/cm2 of bottom junction photocurrent at AM1.5D. However, the optimal design depends on the spectrum and operating temperature. We show how the device flexibility can be used to fine-tune the design for various spectra in order to maximize energy yield for a given operating condition. 1-sun devices achieve 35.3% efficiency under the AM0 spectrum and 37.8% efficiency under the global spectrum at 25°C. Concentrator devices achieve 45.7% peak efficiency under 234x the direct spectrum and maintain over 45% efficiency at 700x at 25°C. Other device improvements include a 4-layer anti-reflection coating with low power loss, and reduced series resistance. | |
Internacional
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Si |
Nombre congreso
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42nd IEEE Photovoltaic Specialist Conference |
Tipo de participación
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960 |
Lugar del congreso
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New Orleans, EEUU |
Revisores
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Si |
ISBN o ISSN
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978-1-4799-7944-8 |
DOI
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10.1109/pvsc.2015.7356439 |
Fecha inicio congreso
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14/06/2015 |
Fecha fin congreso
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19/06/2015 |
Desde la página
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1 |
Hasta la página
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3 |
Título de las actas
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Proc. PVSC 2015 |