Descripción
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In this study we investigate the dissolution of electrically inactive phosphorus complexes by low temperature annealing after the POCl3 diffusion process. This has the immediate consequence that the existing near-surface emitter volume SRH recombination can be reduced. Thereby, a significant reduction of emitter saturation current density j0E is achieved without driving the emitter further into the silicon substrate. For short-term temperature treatments well below the POCl3 diffusion temperature, a reduction of up to -60 fA/cm2 has been achieved. This study increases our understanding of the formation and dissolution of electrically inactive phosphorus complexes during post-annealing processes. | |
Internacional
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Si |
JCR del ISI
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No |
Título de la revista
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Energy Procedia |
ISSN
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1876-6102 |
Factor de impacto JCR
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Información de impacto
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Volumen
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77 |
DOI
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10.1016/j.egypro.2015.07.040 |
Número de revista
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Desde la página
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286 |
Hasta la página
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290 |
Mes
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SIN MES |
Ranking
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