Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Effects of the d-donor level of vanadium on the properties of Zn1-xVxO films
Year:2015
Research Areas
  • Technology of devices for engineering
Information
Abstract
We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn 1?xVxO with 0?x?0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x == 0.04 and then decreases and films become insulating for x?>?0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB ( E+E+ ) and the downward shift of the fully occupied E?E? band derived from the vanadium d-levels. The composition dependence of optical absorption edge ( E+E+ ) and PL peak ( E?E? ) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13?eV below CB of ZnO and a coupling constant of 0.65?eV.
International
Si
JCR
Si
Title
Applied Physics Letters
ISBN
0003-6951
Impact factor JCR
3,515
Impact info
Volume
106
10.1063/1.4919791
Journal number
18
From page
182101-1
To page
182101-4
Month
SIN MES
Ranking
Participants
  • Autor: Eric Garcia Hemme (UPM)
  • Autor: K.M. Yu
  • Autor: Perla Wahnon Benarroch (UPM)
  • Autor: G. González-Díaz
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Tecnología Fotónica y Bioingeniería
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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