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Descripción
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| The Empiric k·p Hamiltonian method is usually applied to nanostructured semiconductors. In this paper, it is applied to a homogeneous semiconductor in order to check the adequacy of the method. In this case, the solutions of the diagonalized Hamiltonian, as well as the envelope functions, are plane waves. The procedure is applied to the GaAs and the interband absorption coefficients are calculated. They result in reasonable agreement with the measured values, further supporting the adequacy of the Empiric k·p Hamiltonian method. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Physica B-Condensed Matter |
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ISSN
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0921-4526 |
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Factor de impacto JCR
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1,276 |
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Información de impacto
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Volumen
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456 |
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DOI
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10.1016/j.physb.2014.08.026 |
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Número de revista
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Desde la página
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82 |
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Hasta la página
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86 |
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Mes
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SIN MES |
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Ranking
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