Memorias de investigación
Artículos en revistas:
Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells
Año:2015
Áreas de investigación
  • Células solares,
  • Tecnología de dispositivos para ingeniería eléctrica y electrónica
Datos
Descripción
Intermediate band solar cells must demonstrate the principle of voltage preservation in order to achieve high conversion efficiencies. Tunnel escape of carriers has proved deleterious for this purpose in quantum dot intermediate band solar cells. In previous works, thick spacers between quantum dot layers were demonstrated as a means of reducing tunnel escape, but this approach is unrealistic if a large number of quantum dot layers have to be grown. In this work we report experimental proof that the use of field damping layers is equally effective at reducing tunnel carrier escape, by reducing the potential drop in the QD-stack and the associated electric field. Moreover, we demonstrate that the fact that tunnel carrier escape takes place under short-circuit conditions does not imply that voltage preservation cannot be achieved. We describe a theory that relates the evolution of the tunnel escape to bias voltage and the preservation of the voltage in an IBSC. Temperature and voltage-dependent quantum efficiency measurements, temperature dependent open-circuit voltage measurements and calculations of the internal electric field in IBSCs serve as the basis of the proposed theory.
Internacional
Si
JCR del ISI
Si
Título de la revista
Solar Energy Materials And Solar Cells
ISSN
0927-0248
Factor de impacto JCR
5,03
Información de impacto
Volumen
140
DOI
10.1016/j.solmat.2015.04.029
Número de revista
Desde la página
299
Hasta la página
305
Mes
SIN MES
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física