Memorias de investigación
Artículos en revistas:
Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion
Año:2015
Áreas de investigación
  • Células solares
Datos
Descripción
Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.
Internacional
Si
JCR del ISI
Si
Título de la revista
Nature Communications
ISSN
2041-1723
Factor de impacto JCR
10,742
Información de impacto
Volumen
6
DOI
10.1038/ncomms7902
Número de revista
Desde la página
1
Hasta la página
6
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física