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Memorias de investigación
Communications at congresses:
A Thermal Adaptive Scheme for Reliable Write Operation on RRAM Based Architectures
Year:2015
Research Areas
  • Microelectronic design
Information
Abstract
Resistive RAMs (RRAMs) are one of the most promising alternatives to future storage and neuromorphic computing systems. However, the behavior of RRAM highly depends on voltage, crossbar design and operation temperature. Actually, the circuit temperature becomes one of the most critical issues in fast memories during writing operations. In this paper we propose a novel thermal-adaptive RRAM writing scheme, applicable to crossbar memories, whose smart operation is able to mitigate the writing errors induced by temperature variations. Using a sensing-acting scheme our system is able to improve the memory reliability without affecting the writing/reading performance. Moreover, the proposed architecture is compatible with most proposed write/read designs making achievable multibit storage, which requires extremely accurate operations.
International
Si
Congress
Computer Design (ICCD), 2015 33rd IEEE International Conference on
960
Place
Nueva York, EEUU
Reviewers
Si
ISBN/ISSN
978-1-4673-7165-0
10.1109/ICCD.2015.7357126
Start Date
18/10/2015
End Date
21/10/2015
From page
367
To page
374
Computer Design (ICCD), 2015 33rd IEEE International Conference on
Participants
  • Autor: Fernando Garcia Redondo (UPM)
  • Autor: M. Luisa Lopez Vallejo (UPM)
  • Autor: Pablo Ituero Herrero (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Departamento: Ingeniería Electrónica
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