Research Publications in journals:
Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen
Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen
Year:2016
Research Areas
Information
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Abstract
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International
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Si |
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JCR
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Si |
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Title
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
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ISBN
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0268-1242 |
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Impact factor JCR
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2,19 |
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Impact info
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Volume
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31 |
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10.1088/0268-1242/31/3/035010 |
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Journal number
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3 |
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From page
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0 |
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To page
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8 |
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Month
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Ranking
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0 |
Participants
- Autor:
a. kurtz (UPM) - Autor: a. hierro (UPM)
- Autor: m. lopez-ponce (UPM)
- Autor: g. tabares (UPM)
- Autor: j. m. chauveau
Research Group, Departaments and Institutes related
- Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)