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Memorias de investigación
Communications at congresses:
Characterization of analog modules: Reliability analyses of radiation, temperature and variations effects
Year:2016
Research Areas
  • Electronic technology and of the communications
Information
Abstract
Nowadays the uncertainties produced by the combined effect of PVT Variations together with radiation dramatically compromises electronic systems behavior. Usually, radiation effects are studied from a digital point of view, analyzing upset error ratios and their consequences. In this work we redefine the analysis methodology of combined effects of multiple error sources that may affect analog circuits. For this purpose, we use an ad-hoc reliability simulation framework, that comes as a CAD solution for circuit designers which require an alternative method for validating the circuit instead of the time and cost consuming radiation tests. Developed on top of a SPICE-level simulator and a radiation model library which allows not only most CMOS radiation schemes but also predictive technologies and emerging devices to be used during the multi-parameter analysis. We applied the framework and related methodology to the characterization of a bandgap voltage reference, completely identifying its reliability properties when working on a wide temperature range and radiation environments.
International
Si
Congress
Design of Circuits and Integrated Systems (DCIS), 2016 Conference on
960
Place
Granada
Reviewers
Si
ISBN/ISSN
978-1-5090-4565-5
10.1109/DCIS.2016.7845361
Start Date
23/11/2016
End Date
25/11/2016
From page
0
To page
1
Characterization of analog modules: Reliability analyses of radiation, temperature and variations effects
Participants
  • Autor: Fernando Garcia Redondo (UPM)
  • Autor: Hernan Aparicio Cerqueira (UPM)
  • Autor: M. Luisa Lopez Vallejo (UPM)
  • Autor: Pablo Ituero Herrero (UPM)
  • Autor: Carlos Alberto Lopez Barrio (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones
  • Departamento: Ingeniería Electrónica
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