Memorias de investigación
Artículos en revistas:
Manufacturing and Characterization of III-V on Silicon Multijunction Solar Cells
Año:2016
Áreas de investigación
  • Silicio,
  • Células solares
Datos
Descripción
Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an Sshaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2 cm² cell.
Internacional
Si
JCR del ISI
No
Título de la revista
Energy Procedia
ISSN
1876-6102
Factor de impacto JCR
Información de impacto
Volumen
92
DOI
10.1016/j.egypro.2016.07.066
Número de revista
Desde la página
242
Hasta la página
247
Mes
SIN MES
Ranking
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Participantes
  • Autor: E. Veinberg-Vidal
  • Autor: C. Dupré
  • Autor: Pablo Garcia-Linares Fontes UPM
  • Autor: C. Jany
  • Autor: R. Thibon
  • Autor: T. Card
  • Autor: T. Salvetat
  • Autor: P. Scheiblin
  • Autor: C. Brughera
  • Autor: F. Fournel
  • Autor: Y. Desieres
  • Autor: Y. Veschetti
  • Autor: V. Sanzone
  • Autor: P. Mur
  • Autor: J. Decobert
  • Autor: Alejandro Datas Medina UPM
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar