Descripción
|
|
---|---|
The power supply for space probes is usually based on photovoltaic (PV) systems. The first solar cells used in these systems were single-gap solar cells fabricated with Si and GaAs. Later on, multijunction solar cells (MJSC) based on III?V semiconductors were developed because of their higher efficiency and tolerance to a radiation environment [1]. All these solar cells have been based on semiconductors that fulfill the needs of most near-Earth missions. However, those same semiconductors fail to meet the needs of some other missions involving harsh environments such as high-intensity high-temperature (HIHT) environments [2]. In this work, we investigate which semiconductor material is optimum to implement single-gap solar cells for missions to Mercury, where HIHT conditions are expected. Because solar cell efficiency decreases as temperature increases [3], achieving high-efficiency photovoltaic conversion at HIHT conditions is a big challenge. Previous works have pointed out the need of using wide-bandgap semiconductors to reach this goal [4,5]. In this context, we will study the potential of solar cells based on AlxGa1?xAs, a well-known semiconductor whose physical properties have been extensively investigated. The limiting efficiency of these solar cells performing in near-Mercury missions will be calculated to determine the optimum composition for AlxGa1?xAs. | |
Internacional
|
Si |
JCR del ISI
|
Si |
Título de la revista
|
Journal of Spacecraft And Rockets |
ISSN
|
0022-4650 |
Factor de impacto JCR
|
0,474 |
Información de impacto
|
|
Volumen
|
53 |
DOI
|
10.2514/1.a33533 |
Número de revista
|
5 |
Desde la página
|
1 |
Hasta la página
|
5 |
Mes
|
SIN MES |
Ranking
|