Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
The IBC structure as support for three band-gaps tandem devices
Year:2016
Research Areas
  • Solar cells
Information
Abstract
The IBC structure is one of the champions in the efficiency competition of silicon devices. Industrial cells are produced with efficiency values surpassing 24%, what is due to an excellent design in terms of separation from the region where carriers are energized and emitters where these carriers are selectively separated. Their position in the back of the cell allows the access to both quasi-Fermi-levels from this surface, and enables the access to their corresponding levels of top or bottom cells from this place, far away from the entrance of light and simplifying the design of complex multi-band-gap structures. This paper will shown several of these structures, many of them achievable with well known materials with technology developed for the microelectronic sector. These solutions would be to cells with efficiencies in the 30-32 %. Using optimum materials, not clear at this moment, we estimate a technological limit of 39.4 % for these new structures.
International
Si
Congress
32nd European Photovoltaic Solar Energy Conference
960
Place
Munich (Germany)
Reviewers
Si
ISBN/ISSN
3-936338-41-8
10.4229/EUPVSEC20162016-2AV.3.34
Start Date
20/06/2016
End Date
24/06/2016
From page
845
To page
849
Proc. 32nd EUPVSEC 2016
Participants
  • Autor: J.C. Jimeno
  • Autor: R. Gutierrez
  • Autor: V. Fano
  • Autor: A. Habib
  • Autor: Carlos del Cañizo Nadal (UPM)
  • Autor: M.A. Rasool
  • Autor: A. Otaegi
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar
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