Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Effect of Ge autodoping during III-V on Ge epitaxy by MOVPE
Year:2016
Research Areas
  • Semiconductors ii-vi, iii-v and iv-iv
Information
Abstract
Germanium wafers are heavily used in MOVPE as the substrate of choice for triple junction solar cells (both for space and terrestrial concentrator applications) and some LEDs. Germanium has a lattice constant quite close to that of GaAs and offers some advantages over the latter such as lower cost, higher mechanical strength, virtually zero etch pit density and a slightly higher thermal conductivity(...)
International
Si
Congress
18th International Conference on Metal Organic Vapor Phase Epitaxy
960
Place
San Diego (CA) EEUU
Reviewers
Si
ISBN/ISSN
0022-0248
Start Date
10/07/2016
End Date
15/07/2016
From page
1
To page
3
Special Issue Journal of Crystal Growth (En prensa)
Participants
  • Autor: Laura Barrutia Poncela (UPM)
  • Autor: Enrique Barrigón
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)