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Descripción
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| The energy bandgap of GaInP solar cells can be tuned by modifying the degree of order of the alloy. In this study, we employed Sb to increase the energy bandgap of the GaInP and analyzed its impact on the performance of GaInP solar cells. An effective change in the cutoff wavelength of the external quantum efficiency of GaInP solar cells and an effective increase of 50 mV in the open-circuit voltage of GaInP/Ga(In)As/Ge triple junction solar cells were obtained with the use of Sb. © 2016 John Wiley & Sons, Ltd. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Progress in Photovoltaics |
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ISSN
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1062-7995 |
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Factor de impacto JCR
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9,696 |
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Información de impacto
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Volumen
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24 |
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DOI
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10.1002/pip.2777 |
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Número de revista
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8 |
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