Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Assessment of aluminium nitride films sputtered on iridium electrodes
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters and pre-treatment of the Ir substrates by Ar+ bombardment in the texture of the AlN films is also investigated. X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric assessment through measurement of BAW devices demonstrate that exceptionally highly c-axis-oriented AlN with high piezoelectric response can be sputtered on Ir electrodes.
International
No
JCR
No
Title
2007 IEEE International Ultrasonics Symposium Proc.
ISBN
1051-0117
Impact factor JCR
0
Impact info
Volume
Journal number
0
From page
1401
To page
1404
Month
SIN MES
Ranking
Participants
  • Participante: Nick Rimmer (Aviza Technology, Inc.)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Enrique Iborra Grau (UPM)
  • Participante: Amit Rastogi (Aviza Technology, Inc.)
  • Autor: Sheila González Castilla (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Tecnología Electrónica
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