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Memorias de investigación
Communications at congresses:
Assessment of aluminium nitride films sputtered on iridium electrodes
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters and pre-treatment of the Ir substrates by Ar+ bombardment in the texture of the AlN films is also investigated. X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric assessment through measurement of BAW devices demonstrate that exceptionally highly c-axis-oriented AlN with high piezoelectric response can be sputtered on Ir electrodes.
International
Si
Congress
2007 IEEE International Ultrasonics Symposium
960
Place
Nueva York, Estados Unidos
Reviewers
Si
ISBN/ISSN
Start Date
28/10/2007
End Date
31/10/2007
From page
To page
Participants
  • Participante: Nick Rimmer (Aviza Technology, Inc.)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Participante: Amit Rastogi (Aviza Technology, Inc.)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Sheila González Castilla (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Tecnología Electrónica
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