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Aluminium nitride bulk acoustic wave devices with iridium bottom electrodes
Research Areas
  • Electronics engineering
Bulk acoustic wave (BAW) test resonators in the frequency range between 1.8 to 1.9 GHz were fabricated with piezoelectric aluminum nitride (AlN) films sputtered on iridium (Ir) bottom electrodes. The crystal structure and piezoelectric response of AlN films grown on Ir were as good as those of the best AlN films grown on other metallic electrodes, like platinum (Pt), molybdenum (Mo) or tungsten (W). Solidly mounted resonators (SMR) test devices with a single low-impedance layer of silicon dioxide (SiO2) for acoustic isolation were used for the preliminary assessment of both the piezoelectric activity of AlN and the influence of the iridium layer on the performance of the devices. The transversal electromechanical coupling factor of the AlN films was derived by fitting the electrical response of the resonators to Mason¿s physical model, which allowed us to obtain a material dependent coupling factor. AlN films exhibited very high coupling factors (7.5 %) barely dependent on the width of the rocking curve (RC) around the AlN 00¿2 reflection. The high acoustic impedance of the Ir bottom electrode reduced the mechanical losses of the BAW resonators, which exhibited higher quality factors than resonators built on lighter Mo bottom electrodes. The influence of the thickness of Ir and Mo bottom electrodes in the performance of the devices was also compared.
2007 IEEE International Ultrasonics Symposium
Nueva York, Estados Unidos
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  • Participante: Nick Rimmer (Aviza Technology, Inc.)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Participante: Amit Rastogi (Aviza Technology, Inc.)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Tecnología Electrónica
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