Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors
Year:2016
Research Areas
  • Microelectronics,
  • Transistors of field efect of mos (mosfet) type,
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Mosfet type devices
Information
Abstract
International
Si
JCR
No
Title
University of Aveiro (UA), Institute of Telecommunications (IT) (Aveiro) and the Associate Laboratory i3N/FSCOSD ? Institute of Nanostructures, Nanomodelling and Nanofabrication (Aveiro)
ISBN
Impact factor JCR
Impact info
Volume
Journal number
From page
To page
Month
JUNIO
Ranking
Participants
  • Autor: Zhan Gao (UPM)
  • Autor: Fatima Romero Rojo (UPM)
  • Autor: andres Redondo-Cubero (UAM)
  • Autor: Maria Angel pampillon (UCM)
  • Autor: Enrique San Andres (UCM)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)