Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
Year:2017
Research Areas
  • Microelectronics,
  • Microelectronic design,
  • Transistors of field efect of mos (mosfet) type,
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Mosfet type devices
Information
Abstract
International
Si
JCR
No
Title
11th Spanish Conference on Electron Devices (CDE-2017)
ISBN
Impact factor JCR
Impact info
Volume
Journal number
From page
To page
Month
SIN MES
Ranking
Participants
  • Autor: Zhan Gao (UPM)
  • Autor: Fatima Romero Rojo (UPM)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)