Memorias de investigación
Artículos en revistas:
Assessment of rear-surface processing strategies for III-V on Si multijunction solar cells based on numerical simulations
Año:2016
Áreas de investigación
  • Células solares
Datos
Descripción
The manufacturing of high-efficiency III-V on Si multijunction solar cells needs the development of hybrid, i.e., adapted to both families of materials, solar cell processing techniques, able to extract the full photovoltaic potential of both the subcells. This fact especially impacts the processing of the silicon rear surface of the tandem, which cannot receive treatments commonly used in the single-junction Si solar cell industry [Al-back surface field (BSF), thermal SiO2, and so on], since these would result in an excessive thermal load that would deteriorate the III-V upper layers (top cell, tunnel junction, and buffer layer). However, the Si bottom cell requires an advanced design with good rear passivation, a good ohmic contact, and good carrier selectivity, so that its contribution to the efficiency of the tandem is maximized. Accordingly, in this paper, several low-temperature compatible rear-surface passivation techniques for the Si bottom subcell in a monolithic III-V/Si tandem solar cell are explored. In particular, aluminum BSFs, passivated emitter and rear cell (PERC)-like architecture, passivated emitter and rear locally diffused (PERL)-like architecture formed with low thermal loads, and heterojunction with intrinsic thin layer (HIT)-like processes are assessed using numerical simulations, and a comparison of the Si bottom cell performance for the mentioned alternatives in a GaAsP/Si dual-junction solar cell is presented.
Internacional
Si
JCR del ISI
Si
Título de la revista
Ieee Transactions on Electron Devices
ISSN
0018-9383
Factor de impacto JCR
2,207
Información de impacto
Volumen
63
DOI
10.1109/ted.2015.2498527
Número de revista
1
Desde la página
252
Hasta la página
258
Mes
SIN MES
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Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física