Memorias de investigación
Artículos en revistas:
Evolution of silicon bulk lifetime during III-V-on-Si multijunction solar cell epitaxial growth
Año:2016
Áreas de investigación
  • Células solares
Datos
Descripción
The evolution of Si bulk minority carrier lifetime during the heteroepitaxial growth of III?V on Si multijunction solar cell structures via metal-organic chemical vapor deposition (MOCVD) has been analyzed. In particular, the impact on Si lifetime resulting from the four distinct phases within the overall MOCVD-based III?V/Si growth process were studied: (1) the Si homoepitaxial emitter/cap layer; (2) GaP heteroepitaxial nucleation; (3) bulk GaP film growth; and (4) thick GaAsyP1-y compositionally graded metamorphic buffer growth. During Phase 1 (Si homoepitaxy), an approximately two order of magnitude reduction in the Si minority carrier lifetime was observed, from about 450 to ?1?µs. However, following the GaP nucleation (Phase 2) and thicker film (Phase 3) growths, the lifetime was found to increase by about an order of magnitude. The thick GaAsyP1-y graded buffer was then found to provide further recovery back to around the initial starting value. The most likely general mechanism behind the observed lifetime evolution is as follows: lifetime degradation during Si homoepitaxy because of the formation of thermally induced defects within the Si bulk, with subsequent lifetime recovery due to passivation by fast-diffusing atomic hydrogen coming from precursor pyrolysis, especially the group-V hydrides (PH3, AsH3), during the III?V growth. These results indicate that the MOCVD growth methodology used to create these target III?V/Si solar cell structures has a substantial and dynamic impact on the minority carrier lifetime within the Si substrate. Copyright © 2015 John Wiley & Sons, Ltd.
Internacional
Si
JCR del ISI
Si
Título de la revista
Progress in Photovoltaics
ISSN
1062-7995
Factor de impacto JCR
7,365
Información de impacto
Volumen
24
DOI
10.1002/pip.2703
Número de revista
5
Desde la página
634
Hasta la página
644
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Participantes
  • Autor: Elisa García-Tabarés
  • Autor: J.A. Carlin
  • Autor: T.J. Grassman
  • Autor: D. Martín
  • Autor: Ignacio Rey-Stolle Prado UPM
  • Autor: S.A. Ringel
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar