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Descripción
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| Type?II GaAsSb/GaAsN superlattice (SL) structures are presented as a novel approach to remarkably improve the versatility of GaAsSbN and its suitability for 1 eV layers in tandem cells. The spatial separation of both Sb and N demonstrates an improved compositional control allowing an accurate control of the lattice?matching condition. Type?II SLs show a more efficient luminescence than the equivalent bulk and type?I GaAsSbN/GaAs SL counterparts, despite the longer radiative lifetimes, showing promising properties for an efficient carrier collection. The modification of the period thickness also allows a precise control over the absorption edge while additionally tuning the radiative carrier lifetimes. | |
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Internacional
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Si |
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Nombre congreso
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19th International Conference on Molecular Beam Epitaxy (NAMBE2016) |
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Tipo de participación
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960 |
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Lugar del congreso
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Montpellier, France |
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Revisores
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Si |
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ISBN o ISSN
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0000-0000 |
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DOI
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Fecha inicio congreso
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04/09/2016 |
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Fecha fin congreso
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09/09/2016 |
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Desde la página
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62 |
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Hasta la página
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62 |
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Título de las actas
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- |