Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
Year:2016
Research Areas
  • Solar cells
Information
Abstract
Type?II GaAsSb/GaAsN superlattice (SL) structures are presented as a novel approach to remarkably improve the versatility of GaAsSbN and its suitability for 1 eV layers in tandem cells. The spatial separation of both Sb and N demonstrates an improved compositional control allowing an accurate control of the lattice?matching condition. Type?II SLs show a more efficient luminescence than the equivalent bulk and type?I GaAsSbN/GaAs SL counterparts, despite the longer radiative lifetimes, showing promising properties for an efficient carrier collection. The modification of the period thickness also allows a precise control over the absorption edge while additionally tuning the radiative carrier lifetimes.
International
Si
Congress
19th International Conference on Molecular Beam Epitaxy (NAMBE2016)
960
Place
Montpellier, France
Reviewers
Si
ISBN/ISSN
0000-0000
Start Date
04/09/2016
End Date
09/09/2016
From page
62
To page
62
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Participants
  • Autor: Antonio David Utrilla Lomas (UPM)
  • Autor: Alicia Gonzalo Martin (UPM)
  • Autor: D.F. Grossi
  • Autor: D.F. Reyes
  • Autor: V. Braza-Blanco
  • Autor: B. Alen
  • Autor: David Fuertes Marron (UPM)
  • Autor: P.M. Koenraad
  • Autor: T. Ben
  • Autor: D. González
  • Autor: Luis Alberto Guzman Balbas (UPM)
  • Autor: Adrian Hierro Cano (UPM)
  • Autor: Jose Maria Ulloa Herrero (UPM)
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
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