Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Operation of the Three Terminal Heterojunction Bipolar Transistor Solar Cell
Year:2017
Research Areas
  • Solar cells
Information
Abstract
The three terminal heterojunction bipolar transistor solar cell (3T-HBTSC) is characterized by a muti-junction solar cell structure that resembles that of a (npn or pnp) bipolar transistor. The top cell consists of the top np (pn) layers which are made of a high bandgap semiconductor. The bottom n(p) layer is made of a low bandgap semiconductor and, together with the middle p(n) layer, forms the bottom solar cell. The transistor structure allows some simplifications in the layer structure with respect to that of conventional multi-junction solar cells since, for example, tunnel junctions are not necessary. In spite of the name, in the 3T-HBTSC the transistor effect has to be avoided since, in the limit, this would result in the voltage of the top cell being limited by the voltage of the bottom cell.
International
Si
Congress
E-MRS 2017 Spring Meeting ? Symposium E ; E-MRS 2017 Spring Meeting ? Symposium N 1700191
960
Place
Estrasburgo (Francia)
Reviewers
Si
ISBN/ISSN
1610-1642
10.1002/pssc.201700191
Start Date
22/05/2017
End Date
26/05/2017
From page
17001911
To page
17001913
physica Status Solidi c (Special Issue: E-MRS 2017 Spring Meeting ? Symposium E ; E-MRS 2017 Spring Meeting ? Symposium N 1700191)
Participants
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Elisa Antolin Fernandez (UPM)
  • Autor: Pablo Garcia-Linares Fontes (UPM)
  • Autor: Esther Lopez Estrada (UPM)
  • Autor: Juan Villa Morales (UPM)
  • Autor: Iñigo Ramiro Gonzalez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
  • Departamento: Ingeniería Eléctrica, Electrónica Automática y Física Aplicada
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