Memorias de investigación
Ponencias en congresos:
On the thermal degradation of tunnel diodes in multijunction solar cells C3
Año:2017
Áreas de investigación
  • Ingenierías
Datos
Descripción
Tunnel junctions are essential components of multijunction solar cells. These highly doped p/n junctions provide the electrical interconnect between the subcells that constitute a multijunction solar cell device. The conductivity and the peak tunneling current of tunnel diodes are known to be severely affected by thermal load. This is a general phenomenon observed in tunnel junctions despite the materials used, the dopants employed or the growth technique applied. Despite this generality, the explanations for this thermal degradation tend to be quite material/dopant specific. On the contrary, in this work we apply the amphoteric native defect model to explain this issue. In this context, the degradation can be explained as a consequence of the net loss of free carrier concentration produced by the creation of native compensating defects in the highly doped layers of the tunnel junction. Experiments carried out on n++ GaAs agree well with the model.
Internacional
Si
Nombre congreso
13th International Conference on Concentrator Photovoltaic Systems, CPV13
Tipo de participación
960
Lugar del congreso
Ottawa
Revisores
Si
ISBN o ISSN
0094-243X
DOI
10.1063/1.5001427
Fecha inicio congreso
01/05/2017
Fecha fin congreso
03/05/2017
Desde la página
400051
Hasta la página
400057
Título de las actas
Proceedings
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada