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Descripción
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| We demonstrate self-aligned InGaAs FinFETs with fin widths down to 5 nm fabricated through a CMOS compatible front-end process. Precision dry etching of the recess cap results in metal contacts that are about 5 nm away from the intrinsic portion of the fin. The new process has allowed us to fabricate devices with undoped fins and compare them with delta-doped fins. We find that in highly scaled transistors, undoped fin devices show better OFF-state and a tighter VT distribution but similar ON-state characteristics, as compared with ?-doped-fin transistors. 2D Poisson- Schrodinger simulations reveal undoped fins making more effective use of the fin height. | |
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Internacional
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Si |
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Nombre congreso
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2017 IEEE International Electron Devices Meeting (IEDM) |
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Tipo de participación
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960 |
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Lugar del congreso
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San Francisco, CA, USA |
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Revisores
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Si |
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ISBN o ISSN
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978-1-5386-3559-9 |
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DOI
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10.1109/IEDM.2017.8268411 |
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Fecha inicio congreso
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02/12/2017 |
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Fecha fin congreso
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06/12/2017 |
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Desde la página
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429 |
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Hasta la página
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432 |
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Título de las actas
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2017 IEEE International Electron Devices Meeting (IEDM) |