Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Advanced integration of variability and degradation in RRAM SPICE compact models
Year:2017
Research Areas
  • Electronic technology and of the communications,
  • Electronic circuits,
  • Microelectronic design
Information
Abstract
Variability and degradation in RRAM devices involve complex physical mechanisms that depend on the device, environment and programming/read operation. The development of solid and accurate compact models, ready to be used in standard circuit simulators, requires the meticulous emulation of this kind of non-ideal effects. In this work we present an advanced approach for the emulation of complex variability and degradation effects in SPICE compacts models. Without requiring compiled components - such as Verilog-A or CMI code - the proposed solution can be adapted to any kind of memristor model providing full support to the emulation of these intricate behaviors. Thorough experiments illustrate the capabilities of the presented approach. There, we make use of a physical SPICE model that emulates behavioral dependence on the device cycling, simulation time and stress levels. After applying the proposed techniques, we obtain an enhanced model properly aware of the device's non-ideal behavior.
International
Si
Congress
14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017
960
Place
Taormina, Italia
Reviewers
Si
ISBN/ISSN
978-1-5090-5052-9
10.1109/SMACD.2017.7981597
Start Date
12/06/2017
End Date
15/06/2017
From page
1
To page
4
14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017
Participants
  • Autor: Fernando Garcia Redondo (UPM)
  • Autor: M. Luisa Lopez Vallejo (UPM)
  • Autor: Carlos Alberto Lopez Barrio (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones
  • Departamento: Ingeniería Electrónica
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