Memorias de investigación
Ponencias en congresos:
Advanced integration of variability and degradation in RRAM SPICE compact models
Año:2017

Áreas de investigación
  • Tecnología electrónica y de las comunicaciones,
  • Circuitos electrónicos,
  • Diseño microelectrónico

Datos
Descripción
Variability and degradation in RRAM devices involve complex physical mechanisms that depend on the device, environment and programming/read operation. The development of solid and accurate compact models, ready to be used in standard circuit simulators, requires the meticulous emulation of this kind of non-ideal effects. In this work we present an advanced approach for the emulation of complex variability and degradation effects in SPICE compacts models. Without requiring compiled components - such as Verilog-A or CMI code - the proposed solution can be adapted to any kind of memristor model providing full support to the emulation of these intricate behaviors. Thorough experiments illustrate the capabilities of the presented approach. There, we make use of a physical SPICE model that emulates behavioral dependence on the device cycling, simulation time and stress levels. After applying the proposed techniques, we obtain an enhanced model properly aware of the device's non-ideal behavior.
Internacional
Si
Nombre congreso
14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017
Tipo de participación
960
Lugar del congreso
Taormina, Italia
Revisores
Si
ISBN o ISSN
978-1-5090-5052-9
DOI
10.1109/SMACD.2017.7981597
Fecha inicio congreso
12/06/2017
Fecha fin congreso
15/06/2017
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1
Hasta la página
4
Título de las actas
14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017

Esta actividad pertenece a memorias de investigación

Participantes

Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones
  • Departamento: Ingeniería Electrónica