Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Electrically-inactive phosphorus re-distribution during low temperature annealing
Year:2017
Research Areas
  • Solar cells
Information
Abstract
An increased total dose of phosphorus (P dose) in the ?rst 40 nm of a phosphorus di used emitter has been measured after Low Temperature Annealing (LTA) at 700 ?C using the Glow Discharge Optical Emission Spectrometry (GD-OES) technique. This evidence has been observed in three versions of the same emitter containing di erent amounts of initial hosphorus. A stepwise chemical etching of a di used phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the ?rst 40 nm increases during annealing by 1.4?1015 cm?2 for the sample with the highly-doped emitter, by 0.8?1015 cm?2 in the middle-doped emitter, and by 0.5?1015 cm?2 in the lowest-doped emitter. The presence of surface dislocations in the ?rst few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the ?rst 40 nm is lower when this region is etched stepwise.
International
Si
JCR
Si
Title
Journal of Applied Physics
ISBN
0021-8979
Impact factor JCR
2,068
Impact info
Volume
123
10.1063/1.5002627
Journal number
From page
161535
To page
161549
Month
SIN MES
Ranking
Participants
  • Autor: Ana Peral Boiza (UPM)
  • Autor: A. Youssef
  • Autor: A. Dastgheib-Shirazi
  • Autor: A. Akey
  • Autor: I.M. Peters
  • Autor: G. Hahn
  • Autor: T. Buonassisi
  • Autor: Carlos del Cañizo Nadal (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)