Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities
Year:2017
Research Areas
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Solar cells
Information
Abstract
In the quest for metal contacts for electronic devices handling high current densities, we report the results of Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-GaAs and compare them to Ti/Pd/Ag and AuGe/Ni/Au. These metal systems have been designed with the goal of producing an electrical contact with (a) low metal?semiconductor specific contact resistance, (b) very high sheet conductance, (c) good bondability, (d) long-term durability and (e) cost-effectiveness. The structure of the contacts consists of an interfacial layer (either Pd or Pd/Ge) intended to produce a low metal?semiconductor specific contact resistance; a diffusion barrier (Ti/Pd) and a thick top layer of Ag to provide the desired high sheet conductance, limited cost and good bondability. The results show that both systems can achieve very low metal resistivity (? M ~ 2 × 10?6 ? cm), reaching values close to that of pure bulk silver. This fact is attributed to the Ti/Pd bilayer acting as an efficient diffusion barrier, and thus the metal sheet resistance can be controlled by the thickness of the deposited silver layer. Moreover, the use of Pd as interfacial layer produces contacts with moderate specific contact resistance (? C ~ 10?4 ? cm2) whilst the use of Pd/Ge decreases the specific contact resistance to ? C ~ 1.5 × 10?7 ? cm2, as a result of the formation of a Pd4(GaAs, Ge2) compound at the GaAs interface.
International
Si
JCR
Si
Title
Semiconductor Science And Technology
ISBN
0268-1242
Impact factor JCR
2,305
Impact info
Volume
32
10.1088/1361-6641/32/4/045006
Journal number
4
From page
045006
To page
045016
Month
SIN MES
Ranking
Participants
  • Autor: Pengyun Huo . (UPM)
  • Autor: Beatriz Galiana
  • Autor: Ignacio Rey-Stolle Prado (UPM)
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)