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Memorias de investigación
Artículos en revistas:
Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities
Año:2017
Áreas de investigación
  • Semiconductores ii-vi, iii-v y iv-iv,
  • Células solares
Datos
Descripción
In the quest for metal contacts for electronic devices handling high current densities, we report the results of Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-GaAs and compare them to Ti/Pd/Ag and AuGe/Ni/Au. These metal systems have been designed with the goal of producing an electrical contact with (a) low metal?semiconductor specific contact resistance, (b) very high sheet conductance, (c) good bondability, (d) long-term durability and (e) cost-effectiveness. The structure of the contacts consists of an interfacial layer (either Pd or Pd/Ge) intended to produce a low metal?semiconductor specific contact resistance; a diffusion barrier (Ti/Pd) and a thick top layer of Ag to provide the desired high sheet conductance, limited cost and good bondability. The results show that both systems can achieve very low metal resistivity (? M ~ 2 × 10?6 ? cm), reaching values close to that of pure bulk silver. This fact is attributed to the Ti/Pd bilayer acting as an efficient diffusion barrier, and thus the metal sheet resistance can be controlled by the thickness of the deposited silver layer. Moreover, the use of Pd as interfacial layer produces contacts with moderate specific contact resistance (? C ~ 10?4 ? cm2) whilst the use of Pd/Ge decreases the specific contact resistance to ? C ~ 1.5 × 10?7 ? cm2, as a result of the formation of a Pd4(GaAs, Ge2) compound at the GaAs interface.
Internacional
Si
JCR del ISI
Si
Título de la revista
Semiconductor Science And Technology
ISSN
0268-1242
Factor de impacto JCR
2,305
Información de impacto
Volumen
32
DOI
10.1088/1361-6641/32/4/045006
Número de revista
4
Desde la página
045006
Hasta la página
045016
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Pengyun Huo . (UPM)
  • Autor: Beatriz Galiana
  • Autor: Ignacio Rey-Stolle Prado (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
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