Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Effect of Ge autodoping during III-V MOVPE growth on Ge substrates
Year:2017
Research Areas
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Technology of devices for engineering,
  • Epitaxies and crystalline growth
Information
Abstract
During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a Si3N4 backside coating for the Ge substrates has been evaluated.
International
Si
JCR
Si
Title
Journal of Crystal Growth
ISBN
0022-0248
Impact factor JCR
1,751
Impact info
Volume
475
10.1016/j.jcrysgro.2017.06.022
Journal number
From page
378
To page
383
Month
SIN MES
Ranking
Participants
  • Autor: Laura Barrutia Poncela (UPM)
  • Autor: Enrique Barrigón
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)