Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
The effect of Sb-surfactant on GaInP CuPtB type ordering: Assessment through dark field TEM and aberration corrected HAADF imaging
Year:2017
Research Areas
  • Chemical phisycs of materials,
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Technology of devices for engineering
Information
Abstract
We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6°misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains.
International
Si
JCR
Si
Title
Physical Chemistry Chemical Physics
ISBN
1463-9076
Impact factor JCR
4,123
Impact info
Volume
19
10.1039/c7cp01125c
Journal number
15
From page
9806
To page
9810
Month
SIN MES
Ranking
Participants
  • Autor: C. Coll
  • Autor: E. Barrigón
  • Autor: L. López-Conesa
  • Autor: J. Rebled
  • Autor: Laura Barrutia Poncela (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: S. Estradé
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: F. Peiró
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)