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Descripción
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| We study the performance degradation of InGaAs FinFETs as they scale to sub-10 nm fin width. This is often attributed to degradation in intrinsic transport parameters. High frequency measurements, however, indicate increasingly severe oxide trapping as the fin width narrows. This is confirmed by pulsed- IV measurements. A new mobility extraction method using concurrent S-parameter and DC-IV measurements avoids the impact of oxide trapping and reveals promising mobility in thin-channel InGaAs planar MOSFETs and narrow-width FinFETs. Our study suggests that performance degradation of InGaAs FinFETs is largely an extrinsic phenomenon that can be engineered around and that the potential performance of deeply-scaled InGaAs FinFETs is significantly underestimated. | |
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Internacional
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Si |
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Nombre congreso
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2019 Symposium on VLSI Technology |
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Tipo de participación
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960 |
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Lugar del congreso
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Kyoto, Japan. |
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Revisores
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Si |
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ISBN o ISSN
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978-4-86348-717-8 |
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DOI
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10.23919/VLSIT.2019.8776578 |
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Fecha inicio congreso
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09/06/2019 |
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Fecha fin congreso
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14/06/2019 |
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Desde la página
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246 |
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Hasta la página
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247 |
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Título de las actas
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Proceedings 2019 Symposium on VLSI Technology |