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Descripción
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| A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thicknesses, but ease the appearance of cracks, as observed in previous designs grown on regular Si substrates. In this new design, a porous silicon layer has been incorporated close to the substrate surface. The ductility of this layer helps repress the propagation of cracks, diminishing the problems of low shunt resistance and thus improving solar cell performance. The first results of this new architecture are presented here. | |
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Internacional
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Si |
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Nombre congreso
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46th IEEE Photovoltaic Specialists Conference |
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Tipo de participación
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960 |
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Lugar del congreso
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Chicago, USA |
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Revisores
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Si |
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ISBN o ISSN
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01608371 |
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DOI
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10.1109/PVSC40753.2019.8981138 |
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Fecha inicio congreso
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16/06/2019 |
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Fecha fin congreso
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21/06/2019 |
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Desde la página
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1 |
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Hasta la página
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6 |
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Título de las actas
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Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates |