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Descripción
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| This paper shows how a backgating noise coming from boundary space charge regions becomes a 1/f resistance noise due to the biasing of the samples. This overseen noise that is Lorentzian with no bias applied, becomes a continuous set of Lorentzian terms in biased samples that synthesizes a 1/f resistance noise. The ratio fhigh/flow for the frequency band where 1/f noise appears is an exponential function of the bias voltage measured in thermal voltage units VT = kT/q at the temperature T of the experiment. Grain boundaries and planar interfaces are powerful sources of this 1/f electrical noise. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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J EUR CERAM SOC |
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ISSN
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0955-2219 |
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Factor de impacto JCR
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1,562 |
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Información de impacto
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Volumen
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27 |
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DOI
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Número de revista
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0 |
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4011 |
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4015 |
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