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Memorias de investigación
Research Publications in journals:
1/f electrical noise due to space charge regions
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
This paper shows how a backgating noise coming from boundary space charge regions becomes a 1/f resistance noise due to the biasing of the samples. This overseen noise that is Lorentzian with no bias applied, becomes a continuous set of Lorentzian terms in biased samples that synthesizes a 1/f resistance noise. The ratio fhigh/flow for the frequency band where 1/f noise appears is an exponential function of the bias voltage measured in thermal voltage units VT = kT/q at the temperature T of the experiment. Grain boundaries and planar interfaces are powerful sources of this 1/f electrical noise.
International
Si
JCR
Si
Title
J EUR CERAM SOC
ISBN
0955-2219
Impact factor JCR
1,562
Impact info
Volume
27
Journal number
0
From page
4011
To page
4015
Month
SIN MES
Ranking
Participants
  • Autor: Jose Ignacio Izpura Torres (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Ingeniería Electrónica
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