Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain-current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and drain-lag turn-on measurements are analyzed, revealing clear mechanisms of current collapse and related dispersion effects. Numerical 2-D transient simulations considering surface traps effects in a physical HEMT model have also been carried out. A comparison between experimental and theoretical results is shown. The presence of donor-type traps acting as hole traps, due to their low energy level of 0.25 eV relative to the valence band, with densities >1e20 cm-3 (>5e12 cm-2), uniformly distributed at the HEMT surface, and interacting with the free holes that accumulated at the top surface due to piezoelectric fields, accounts for the experimentally observed effects. Time constants next to 10 ms are deduced. Some additional features in the measured transient currents, with faster time constants, could not be associated with surface states.
International
Si
JCR
Si
Title
IEEE T ELECTRON DEV
ISBN
0018-9383
Impact factor JCR
2,165
Impact info
Volume
54
Journal number
0
From page
410
To page
417
Month
SIN MES
Ranking
Participants
  • Participante: José Manuel Tirado (Universidad de Castilla-La Mancha)
  • Autor: Jose Ignacio Izpura Torres (UPM)
  • Participante: José Luis Sánchez de Rojas (Universidad de Castilla-La Mancha)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Ingeniería Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)