Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
The effect of RF and MW power on the SiNx films grown by pecvd
Year:2007
Research Areas
  • Electronic circuits,
  • Electronic devices
Information
Abstract
The deposition of silicon nitride (SiNx) films by PECVD is widely used for silicon solar cell manufacturing due to its potential for low surface recombination, high bulk passivation and good anti-reflection coating properties. Some experiments have been carried out in our lab in order to optimise the deposition conditions. The RF and MW power, responsible of the silane and ammonia dissociation, are going to be examined carefully in order to achieve the best SiNx passivation layer. Improvements between 120 % and 232 % for the effective lifetime and 112 % and 183 % for the bulk lifetime (after an annealing step) have been reached after the RF power optimization. In the same way, improvements between 182 % and 234 % for the effective lifetime and 167 % and 250 % for the bulk lifetime (after an annealing step) have been reached after the MW power optimization. These results show the potential of this kind of passivation layers.
International
Si
Congress
6th SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS
960
Place
El Escorial, Madrid
Reviewers
Si
ISBN/ISSN
978-1-4244-0868-9
Start Date
31/01/2007
End Date
02/02/2007
From page
To page
Participants
  • Autor: Carlos del Cañizo Nadal (UPM)
  • Autor: Antonio Luque Lopez (UPM)
  • Autor: Salvador Ponce Alcántara (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y nuevos conceptos para células solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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