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Descripción
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| This paper presents two MMIC broadband high power amplifiers of 4 mm of periphery at the output stage in the frequency band 2-6 GHz. The amplifiers are based on Al-GaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They have been fabricated in two different european fondries: SELEX Sistemi Integrati and QINETIQ. SELEX has a gate process technology of 0.5 um, and devices of 10x100um periphery in microstrip technology and QINETIQ has a gate-length of 0.25mu, and devices of 8x125um in coplanar technology. The coplanar amplifier from QINETIQ has demonstrated an output power of 8W in continuous wave at Vds=20V which confirm model predictions. On the other hand, SELEX microstrip amplifier has a saturation power of 10W CW at Vds=25V and 4 GHz. This amplifier measured on-wafer in pulsed conditions exhibits a maximum power of 17W at Vds=30V. | |
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Internacional
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Si |
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Nombre congreso
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European Microwave Integrated Circuits Conference |
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Tipo de participación
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960 |
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Lugar del congreso
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Amsterdam, Paises Bajos |
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Revisores
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Si |
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ISBN o ISSN
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978-2-87487-007-1 |
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DOI
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10.1109/EMICC.2008.4772234 |
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Fecha inicio congreso
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27/10/2008 |
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Fecha fin congreso
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31/10/2008 |
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Desde la página
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83 |
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Hasta la página
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86 |
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Título de las actas
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Proceedings of the 3rd European Microwave Integrated Circuits Conference |