Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Engineering intermediate band materials based on metal-doped chalcogenide compounds by quantum mechanical calculations
Year:2007
Research Areas
  • Physic chemistry,
  • Electronic circuits,
  • Electronic devices
Information
Abstract
In this work we present standard and beyond Density Functional Theory calculations for metal doped chalcogenide compounds as derivatives of CuGaS2 chalcopyrite and MgIn2S4 spinel. The purpose of the work is to develop a material which can be used to create a more efficient photovoltaic solar cell. This material must have a partially filled band inside the band-gap of the appropriate semiconductor as the aforementioned systems. For chalcopyrite alloy materials, we have previously made ab-initio calculations using the Density Functional formalism in the Generalized Gradient approach for different metal substituents as the Ti, V, Cr, and Mn. For the Ti and Chromium cases, the appearing of an intermediate band seems to be promising so we have made more calculations using two more advanced methods where we corrected the correlation and exchange effects. For spinel alloy materials we first presented standard density functional calculations with Vanadium as susbtituent.
International
Si
Congress
22th European Photovoltaic Solar Energy Conference Exhibition
960
Place
Milán, Italia
Reviewers
Si
ISBN/ISSN
3-936338-22-1
Start Date
03/09/2007
End Date
07/09/2007
From page
To page
Participants
  • Participante: Irene Aguilera (UPM-ETSIT-GCC)
  • Autor: Perla Wahnon Benarroch (UPM)
  • Autor: Pablo Palacios Clemente (UPM)
  • Autor: Kefrén Sánchez Noriega (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y nuevos conceptos para células solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Tecnologías Especiales Aplicadas a la Telecomunicación
  • Departamento: Electrónica Física
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