Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Aluminum nitride for heatspreading in RF IC’s
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC’s, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 lm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.
International
Si
JCR
Si
Title
SOLID-STATE ELECTRONICS
ISBN
0038-1101
Impact factor JCR
1,259
Impact info
Volume
52
10.1016
Journal number
9
From page
1359
To page
1363
Month
SEPTIEMBRE
Ranking
Participants
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
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Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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