Memorias de investigación
Artículos en revistas:
Aluminum nitride for heatspreading in RF IC’s
Año:2008
Áreas de investigación
  • Industria electrónica
Datos
Descripción
To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC’s, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 lm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.
Internacional
Si
JCR del ISI
Si
Título de la revista
SOLID-STATE ELECTRONICS
ISSN
0038-1101
Factor de impacto JCR
1,259
Información de impacto
Volumen
52
DOI
10.1016
Número de revista
9
Desde la página
1359
Hasta la página
1363
Mes
SEPTIEMBRE
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica