Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer 50 nm grown at a low temperature 500 °C on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAs/Ge heterointerface decrease.
International
Si
JCR
Si
Title
APPLIED PHYSICS LETTERS
ISBN
0003-6951
Impact factor JCR
3,596
Impact info
Volume
92
Journal number
0
From page
152102-1
To page
152102-3
Month
ENERO
Ranking
Participants
  • Autor: W. Stolz
  • Autor: Beatriz Galiana Blanco (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: K Volz
  • Autor: Carlos Algora Del Valle (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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