Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
The incorporation of Te into the crystal lattice, when it is used as an n-type dopant for GaAs grown by metalorganic vapor phase epitaxy, is studied. For this purpose, several growth temperatures, total pressures, growth rates, and substrate misorientations have been analyzed, from which it is concluded that depending on the substrate misorientation and total pressure used, the Te behaves like a volatile dopant or a nonvolatile dopant as result of the enhancement or minimization of its adsorption onto the growth surface.
International
Si
JCR
Si
Title
JOURNAL OF APPLIED PHYSICS
ISBN
0021-8979
Impact factor JCR
2,171
Impact info
Volume
104
Journal number
0
From page
114906
To page
114908
Month
ENERO
Ranking
Participants
  • Autor: Beatriz Galiana Blanco (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)