Memorias de investigación
Ponencias en congresos:
Modeling of GaInP/GaAs dual junction solar cells including tunnel junction
Año:2008
Áreas de investigación
  • Industria electrónica
Datos
Descripción
This paper presents research efforts conducted at the IES-UPM in the development of an accurate, physically-based solar cell model using the generalpurpose ATLAS® device simulator by Silvaco. Unlike solar cell models based on a combination of discrete electrical components, this novel model extracts the electrical characteristics of a solar cell based on virtual fabrication of its physical structure, allowing for direct manipulation of materials, dimensions, and dopings. As single junction solar cells simulation was yet achieved, the next step towards advanced simulations of multi-junction cells (MJC) is the simulation of the tunnel diodes, which interconnect the subcells in a monolithic MJC. The first results simulating a Dual- Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) model and the resonant cavity effect occurring in the bottom cell. Simulation and experimental results were compared in order to test the accuracy of the models employed.
Internacional
Si
Nombre congreso
33rd IEEE Photovoltaic Specialists Conference
Tipo de participación
960
Lugar del congreso
San Diego (Estados Unidos)
Revisores
Si
ISBN o ISSN
0160-8371
DOI
Fecha inicio congreso
11/05/2008
Fecha fin congreso
16/05/2008
Desde la página
146
Hasta la página
150
Título de las actas
Proceedings IEEE
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar