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Memorias de investigación
Communications at congresses:
PIEZOELECTRIC CHARACTERIZATION OF AlN THIN FILMS ON SILICON SUBSTRATES
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
Abstract: The electric field induced deformations of thin piezoelectric, aluminium nitride (AlN) layers, on top of a silicon substrate, were studied by numerical calculations and interferometric measurements. Our calculation by finite element method demonstrates that substrate deformation under the top electrode may be comparable to the deformation in the thin AlN layer, for a given applied voltage. Simulations also show the effect of a clamped or free substrate condition and the relative contributions of d33 and d31 piezoelectric constants. A Laser scanning vibrometry technique was used to measure deformations in the top surface with sub-picometer vertical resolution. By comparing calculations and experimental data, quantitative information about both d31 and d33 constants can be obtained. Keywords: piezoelectric, AlN, vibrometer
International
Si
Congress
Eurosensors 2008
960
Place
Dresde
Reviewers
Si
ISBN/ISSN
978-3-00-025217-4
Start Date
07/09/2008
End Date
10/09/2008
From page
857
To page
860
Eurosensors 2008 Proceedings
Participants
  • Autor: Sheila González Castilla (UPM)
  • Autor: Enrique Iborra Grau (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
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