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Descripción
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| Lasers are essential tools for cell isolation and monolithic interconnection in thin-filmsilicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCO), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However material ablation with minimum debris and small heat affected zone is one of the main difficulties to achieve to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of Diode-Pumped Solid-State Laser Sources (DPSS). We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si;H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial lasers sources as an alternative to standard backscribing process in device fabrication. | |
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Internacional
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Si |
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Nombre congreso
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E-MRS SPRING MEETING 2008. SYMPOSIUM K |
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Tipo de participación
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960 |
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Lugar del congreso
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ESTRASBURGO (FRANCIA) |
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Revisores
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Si |
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ISBN o ISSN
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0000000000 |
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DOI
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Fecha inicio congreso
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26/05/2008 |
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Fecha fin congreso
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30/05/2008 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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ABSTRACTS WEB EMRS |