Memorias de investigación
Artículos en revistas:
Growth of InP on GaAs „001… by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
Año:2008
Áreas de investigación
  • Industria electrónica
Datos
Descripción
Direct heteroepitaxial growth of InP layers on GaAs 001 wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen H. The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 °C and different doses of H were used; after this, the growth proceeded without H while the temperature was increased slowly with time. The incorporation of H drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.
Internacional
Si
JCR del ISI
Si
Título de la revista
JOURNAL OF APPLIED PHYSICS
ISSN
0021-8979
Factor de impacto JCR
2,171
Información de impacto
Volumen
103
DOI
10.1063/1.2824967
Número de revista
0
Desde la página
013508-1
Hasta la página
013508-
Mes
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Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica